130
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5239
900
550
7
3(Pulse6)
1.5
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC5239
100max
100max
550min
10to30
0.5max
1.2max
6typ
35typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=0.2A
IC=1A, IB=0.2A
VCE=12V, IE=–0.25A
VCB=10V, f=1MHz
2SC5239
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
Pc–Ta Derating
Reverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
0.03 0.10.05 150.5
0
1.5
1.0
0.5
Collector Current IC(A)
VBE(sat)
VCE(sat)
IC/IB=5 Const.
0
5
4
3
2
1
0 1.00.5
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
0.02 0.10.05 1 5 60.5
5
4
10
40
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
25˚C
–55˚C
0.2 10.5 3
0.1
0.5
5
7
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
ton
tf
VCC 250V
IC:IB1:IB2=1:0.15:–0.45
0.3
1
4
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
50
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
10 50 500 1000100
1
0.5
0.1
0.01
0.05
5
7
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
10 50 100 500
0.05
0.01
1
0.5
0.1
5
7
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
100
µ
s
50
µ
s
Without Heatsink
Natural Cooling
0
0
2
1
3
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
300mA400mA
200mA
150mA
100mA
IB=40mA
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
250
RL
(Ω)
250
IC
(A)
1
VBB2
(V)
–5
IB2
(A)
–0.45
ton
(m s)
0.7max
tstg
(m s)
4.0max
tf
(m s)
0.5max
IB1
(A)
0.15
VBB1
(V)
10
External Dimensions MT-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2±0.2
ø3.75±0.2
3.0
±0.2
4.8±0.2
1.4
2.0±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.