1
Power Transistors
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1700V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10A
I
C
= 10A, I
B
= 2.8A
I
C
= 10A, I
B
= 2.8A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 12A, I
B1
= 2.4A, I
B2
= –4.8A,
Resistance loaded
min
5
typ
3
1.5
0.12
max
1
50
12
3
1.5
2.5
0.2
Unit
m A
m A
V
V
MHz
m s
m s
2SC5243
Silicon NPN triple diffusion mesa type
For horizontal deflection output
n
Features
l High breakdown voltage, and high reliability through the use of a
glass passivation layer
l High-speed switching
l Wide area of safe operation (ASO)
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Peak base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CP
*
I
BP
P
C
T
j
T
stg
Ratings
1700
1700
6
15
30
10
200
3.5
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
*
Non-repetitive peak
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0– 0.5
6.0
10.0
26.0
–
0.5
20.0
–
0.5
1.5
2.5
Solder Dip
10.9– 0.5
123
2.0– 0.3
3.0– 0.3
1.0– 0.2
5.0– 0.3
3.0
4.0
2.0
5.45– 0.3
0.6– 0.2
1.5
2.7– 0.3
1.5
2.0
f 3.3– 0.2
3.0