1
Power Transistors
2SC5223
Silicon NPN triple diffusion planar type
For high-speed switching
n
Features
l High collector to base voltage V
CBO
l High collector to emitter V
CEO
n
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25 C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
500
500
7
2.0
1.0
10
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
Conditions
V
CB
= 400V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 100m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 330mA
I
C
= 330mA, I
B
= 33mA
I
C
= 330mA, I
B
= 33mA
min
500
500
7
100
100
typ max
100
10
1.0
1.5
Unit
m A
m A
V
V
V
V
V
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
6.5– 0.1
5.3– 0.1
4.35– 0.1
4.6– 0.1
2.3– 0.1
0.75– 0.1
123
0.93– 0.1
2.5
–
0.1
0.8max
1.0
–
0.2
7.3
–
0.1
1.8
–
0.1
2.3– 0.1
0.5– 0.1
0.5– 0.1
0.1– 0.05
1.0– 0.1
6.5– 0.2
2.3
5.35
4.35
13.3
–
0.3
2.3
–
0.1
5.5
–
0.2
6.0
1.8
0.75
0.6
3
2.3
21
0.5– 0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Unit: mm