1
Transistor
2SC5216
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
n
Features
l High transition frequency f
T
.
l Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65– 0.15 0.65– 0.15
3
1
2
0.95
0.95
1.9
–
0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4– 0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
8
3
50
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Emitter cutoff current
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
Common emitter reverse transfer capacitance
Power gain
h
FE
ratio
Symbol
I
EBO
V
CBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
C
rb
PG
h
FE(RATIO)
Conditions
V
EB
= 2V, I
C
= 0
I
C
= 100m A, I
E
= 0
V
CE
= 4V, I
C
= 2mA
I
C
= 20mA, I
B
= 4mA
V
CE
= 4V, I
C
= 2mA
V
CB
= 10V, I
E
= –15mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CE
= 4V, I
C
= 100m A
V
CE
= 4V, I
C
= 2mA
min
15
100
0.8
0.6
14
0.6
typ
0.7
1.3
1.0
0.4
18
max
2
350
0.5
1.9
1.4
22
1.5
Unit
m A
V
V
V
GHz
pF
pF
dB
Marking symbol : FB