© 1994
DATA SHEET
SILICON TRANSISTOR
FEATURES PACKAGE DRAWINGS
• Low Voltage Operation, Low Phase Distortion (Unit: mm)
• Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.5 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
IC = 100 mA
• Supercompact Mini Mold Package
ORDERING INFORMATION
PART NUMBER QUANTITY PACKING STYLE
2SC5195 In-bulk products Embossed tape 8 mm wide.
(50 pcs.) Pin 3 (Collector) face to perforation side of
2SC5195-T1 Taped products
the tape.
(3 Kpcs/Reel)
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 100 mA
Total Power Dissipation PT 125 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
2SC5195
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
1.6±0.1
88
0.15
–0.05+0.1
0.6
2
0.75±0.05
1.0
0.5
0.5
1
0.3
–0+0.1
3
+0.1
0 to 0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.2
–0
1.6±0.1
0.8±0.1
Document No. P10398EJ2V0DS00 (2nd edition)
(Previous No. TD-2488)
Date Published August 1995 P
Printed in Japan