1
Transistor
2SC5190
Silicon NPN epitaxial planer type
For low-voltage high-frequency amplification
n
Features
l High transition frequency f
T
.
l Small collector output capacitance C
ob
.
l S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package
2.1– 0.1
1.3
–
0.1
0.9
–
0.1
0.7
–
0.1
0.3
+0.1 –0
0.15
+0.1 –0.05
2.0
–
0.2
1.25– 0.1 0.4250.425
1
3
2
0.65
0.2
0
.65
0 to 0.1
0.2– 0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
9
6
2
30
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Foward transfer gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
C
ob
f
T
| S
21e
|
2
NF
Conditions
V
CB
= 5V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 3V, I
C
= 10mA
V
CB
= 3V, I
E
= 0, f = 1MHz
V
CE
= 3V, I
C
= 10mA, f = 1.5GHz
V
CE
= 0.3V, I
C
= 1mA, f = 0.9GHz
V
CE
= 0.3V, I
C
= 1mA, f = 0.9GHz
min
40
typ
100
0.4
10
6.5
1.7
max
1
1
160
0.7
Unit
m A
m A
pF
GHz
dB
dB
Marking symbol : 3Y