© 1994
DATA SHEET
SILICON TRANSISTOR
2SC5180
FEATURES
• Low current consumption and high gain
S21e
2
= 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
S21e
2
= 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• Supper Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY ARRANGEMENT
NUMBER
Embossed tape, 8 mm wide, pins No. 3
2SC5180–T1 (base) and No. 4 (emitter) facing the
3 000 units/reel
perforations
Embossed tape, 8 mm wide, pins No. 1
2SC5180–T2 (collector) and No. 2 (emitter) facing the
perforations
* Contact your NEC sales representatives to order samples for evaluation (available
in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 5V
Collector to Emitter Voltage VCEO 3V
Emitter to Base Voltage VEBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 30 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
2.0 ± 0.2
1.25 ± 0.1
2
1
3
4
(1.25)
0.65
0.60
0.3
+0.1 –0.05
0.4
+0.1 –0.05
0.3
+0.1 –0.05
0.3
+0.1 –0.05
(1.3)
0.9 ± 0.1
0.3
0.15
+0.1 –0.05
0 to 0.1
2.1 ± 0.2
T84
PACKAGE DIMENSIONS
(Units : mm)
1. Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12104EJ2V0DS00 (2nd edition)
(Previous No. TC-2477)
Date Published December 1996 N
Printed in Japan