128
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5124
1500
800
6
10(Pulse20)
5
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings
2SC5124
(Ta=25°C)
hFE–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IC Characteristics (Typical)
Pc–Ta Derating
0.02 0.1 1 1050.5
3
5
10
40
Collector Current IC(A)
DC Current Gain h
FE
(VCE=5V)
125˚C
25˚C
–55˚C
0
10
2
6
4
8
0 1.00.5
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=5V)
Safe Operating Area (Single Pulse)
5 10 10050 500 1000
0.1
1
0.5
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
100
µ
s
100
50
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0.02 0.05 0.1 0.5 1 105
0
2
1
3
Collector Current IC(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC/IB=5:1
0.2 10.5 105
0.1
0.5
5
10
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
tf
VCC 200V
IC:IB1:–IB2=5:1:2
tstg•tf–IC Characteristics (Typical)
Reverse Bias Safe Operating Area
100 50050 20001000
1
0.5
0.1
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
IC–VCE Characteristics (Typical)
0
0
2
10
4
6
8
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
2.4A
700mA
1.2A
1.8A
300mA
IB=100mA
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
(Ω)
33.3
IC
(A)
6
VBB2
(V)
–5
IB2
(A)
–2.4
ton
(m s)
0.1typ
tstg
(m s)
4.0typ
tf
(m s)
0.2typ
IB1
(A)
1.2
VBB1
(V)
10
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
n Electrical Characteristics
Symbol
ICBO1
ICBO2
IEBO
V(BR)CEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
COB
2SC5124
100max
1max
100max
800min
8min
4to9
5max
1.5max
3typ
130typ
Unit
m A
mA
m A
V
V
V
MHz
pF
Conditions
VCB=1200V
VCB=1500V
VEB=6V
IC=10mA
VCE=5V, IC=1A
VCE=5V, IC=8A
IC=8A, IB=2A
IC=8A, IB=2A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
(Ta=25°C)
19.1