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2SC5101

器件描述:Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
器件厂商:SANKEN [Sanken electric]
文件大小:25.26KB,共1页
Sponsor by e络盟
器件资料摘要:
127
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909)
Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5101
200
140
6
10
4
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC5101
10max
10max
140min
50min*
0.5max
20typ
250typ
Unit
m A
m A
V
V
MHz
pF
Conditions
VCB=200V
VEB=6V
IC=50mA
VCE=4V, IC=3A
IC=5A, IB=0.5A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC5101
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
3
2
1
0 0.5 1.0 2.01.5
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=10A
5A
0
10
2
6
4
8
021
Base-Emitter Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
80
60
40
20
3.5
0
05025 75 125100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
10 503 5 100 200
0.1
1
0.5
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
0.02 0.1 0.5 1 5 10
20
50
100
200
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V) (VCE=4V)
Typ
0
0
2
4
6
10
8
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
150mA
200mA
100mA
75mA
50mA
20mA
10mA
300mA
I
B
=400mA
0.02 0.5 51
20
50
300
100
0.1 10
Collector Current IC(A)
DC Current Gain h
FE
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10
0
10
20
40
30
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2 5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
External Dimensions FM100(TO3PF)
Weight : Approx 6.5g
a. Type No.
b. Lot No.
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
60
RL
(Ω)
12
IC
(A)
5
VBB2
(V)
–5
IB2
(A)
–0.5
ton
(m s)
0.24typ
tstg
(m s)
4.32typ
tf
(m s)
0.40typ
IB1
(A)
0.5
VBB1
(V)
10
* hFE Rank O(50to100), P(70to140), Y(90to180)