124
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC5071
500
400
10
12(Pulse24)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC5071
100max
100max
400min
10to30
0.5max
1.3max
10typ
105typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=500V
VEB=10V
IC=25mA
VCE=4V, IC=7A
IC=7A, IB=1.4A
IC=7A, IB=1.4A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
2SC5071
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
Pc–Ta Derating
Reverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
0
0
4
2
6
8
10
12
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
600mA
400mA
200mA
800mA
1A
IB=100mA
0.02 0.10.05 1 5 100.5
0
1
(IC/IB=5)
Collector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚C VCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
0
12
10
8
6
4
2
0 1.00.5
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
0.02 0.10.05 1 101250.5
8
10
40
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
25˚C
–30˚C
10.5 12105
0.1
0.5
5
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC:IB1:IB2=10:1:–2
100
50
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
10 505 500100
1
0.5
0.1
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
IB2 =1.0A
Duty:less than 1%
10 505 100 500
1
0.5
0.1
10
30
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
100
µ
s
Without Heatsink
Natural Cooling
0.3
1
3
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
(Ω)
28.5
IC
(A)
7
VBB2
(V)
–5
IB2
(A)
–1.4
ton
(m s)
1.0max
tstg
(m s)
3.0max
tf
(m s)
0.5max
IB1
(A)
0.7
VBB1
(V)
10
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
External Dimensions MT-100(TO3P)
Weight : Approx 6.0g
a. Type No.
b. Lot No.