1
Power Transistors
2SC5077, 2SC5077A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
n
Features
l High-speed switching
l High collector to base voltage V
CBO
l Wide area of safe operation (ASO)
l Satisfactory linearity of foward current transfer ratio h
FE
l Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
800
900
800
900
500
8
15
7
4
45
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
2SC5077
2SC5077A
2SC5077
2SC5077A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 800V, I
E
= 0
V
CB
= 900V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 0.8A
I
C
= 4A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 0.8A, I
B2
= –1.6A,
V
CC
= 200V
min
500
15
8
typ max
100
100
100
1.0
1.5
1.0
1.0
3.0
0.3
Unit
m A
m A
m A
V
V
V
MHz
m s
m s
m s
2SC5077
2SC5077A
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9– 0.3
231
4.6– 0.2
2.9– 0.2
2.6– 0.1
2.54– 0.2
0.75– 0.1
1.2– 0.15
5.08– 0.4
15.0
–
0.3
13.7
+0.5 –0.2
f 3.2– 0.1
3.0
–
0.2
8.0
–
0.2
4.1
–
0.2
Solder Dip
1.45– 0.15 0.7– 0.1
7°