2SC5060
Transistors
Rev.A 1/3
Power transistor (90±10V, 3A)
2SC5060


zFeatures
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to “L”
loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.


zEquivalent circuit
R2R1
B
C
E
C
B
E: Base
: Collector
: Emitter
R1 3kΩ
R2 1kΩ


zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
90±10
90±10
6
1
2
1
∗1
∗2
150
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
∗1 Single pulse Pw=10ms
∗2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm
2
.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature


zPackaging specifications and hFE
Type 2SC5060
ATV
M
TV2
2500
Package
hFE
Code
Basic ordering unit (pieces)


zExternal dimensions (Unit : mm)
(1) Emitter
(2) Collector
(3) Base
0.451.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
ROHM : ATV

















zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
80
80
−
−
−
1000
−
−
−
−
−
−
−
−
80
20
100
100
10
3
1.5
5000
−
−
V
V
µA
mA
V
−
MHz
pF
IC=50µA
IC=1mA
VCB=70V
VEB=5V
IC/IB=500mA/1mA
VBE(sat) −−2
∗1
∗2
∗1
VIC/IB=500mA/1mA
VCE=3V, IC=0.5A
VCB=5V, IE=−0.1A, f=30MHz
VCE=10V, IE=0A, f=1MHz
ton − 0.2 −µs
IC=0.8A, RL=50Ω
tstg − 5 s IB1= −IB2=8mA
tf − 0.6 −µs
VCC 40V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVEBO 6 −−VIE=5mAEmitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
∗1 Measured using pulse current. ∗2 Transition frequency of the device.