2SC5022
器件描述：Silicon NPN Triple Diffused
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：34.33KB，共7页
Sponsor by e络盟器件资料摘要：
2SC5022
Silicon NPN Triple Diffused
Application
High voltage amplifier
Features
• High breakdown voltage V
(BR)CEO
= 1500 V Min
Outline
1. Base
2. Collector
3. Emitter
TO-220FM
1
2
3
Silicon NPN Triple Diffused
Application
High voltage amplifier
Features
• High breakdown voltage V
(BR)CEO
= 1500 V Min
Outline
1. Base
2. Collector
3. Emitter
TO-220FM
1
2
3