© 1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10394EJ2V0DS00 (2nd edition)
(Previous No. TD-7938)
Date Published August 1995 P
Printed in Japan
2SC5015
FEATURES
• Small Package
• High Gain Bandwidth Product (fT = 12 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC5015-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to
perforation side of the tape.
2SC5015-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to
perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 150 mW
Junction Temperature Ti 150 ˚ C
Storage Temperature Tstg –65 to + 150 ˚ C
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
Caution: Electrostatic Sensitive Device
PACKAGE DIMENSIONS
in millimeters
T83
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
+0.1
–0.05
0.3
+0.1 –0.05
(1.3)
(1.25)
2.0 ± 0.2
0.65
0.60
23
14
0.3
+0.1 –0.05
0.4
+0.1
–0.05
0.9 ± 0.1
0.3
0 to 0.1 0.15
+0.1
–0.05
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter