© 1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10400EJ2V0DS00 (2nd edition)
(Previous No. TD-2412)
Date Published July 1995 P
Printed in Japan
2SC5012
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Small Package
• High Gain Bandwidth Product (fT = 9 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC5012-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to
perforation side of the tape.
2SC5012-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
* Please contact with responsible NEC person, if you require
evaluation sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC5012)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 65 mA
Total Power Dissipation PT 150 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
PACKAGE DIMENSIONS
in millimeters
Caution; Electrostatic Sensitive Device.
2.1 ± 0.2
1.25 ± 0.1
0.3
(LEADS 2, 3, 4)
(1.3)
0.65
0.60
(1.25)
2.0 ± 0.2
1 4
+0.1
–0.05
0.4
+0.1
–0.05
0.3
+0.1 –0.05
XYZ
0 to 0.1
0.3
0.9 ± 0.1
0.15
+0.1
–0.05
0.3
+0.1 –0.05
2 3
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter