© 1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10389EJ2V0DS00 (2nd edition)
(Previous No. TD-2401)
Date Published July 1995 P
Printed in Japan
2SC5010
DESCRIPTION
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an
NEC proprietary fabrication technique.
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
FEATURES
• Low Voltage Use.
• High fT : 12.0 GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
• Low Cre : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz)
• High |S21e|
2
: 8.5 dB TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC5010 50 pcs/Unit.
2SC5010-T1 3 kpcs/Reel.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 125 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Embossed tape 8 mm wide.
Pin3(Collector) face to perforation side
of the tape.
PACKAGE DIMENSIONS
in milimeters
1.6 ± 0.1
0.8 ± 0.1
1.6 ± 0.1
1.0
0.5
0.5
0.2
+0.1 –0
0.3
+0.1 –0
2
1
3
0.75 ± 0.05
0.6
0 to 0.1
0.15
+0.1 –0.05
1. Emitter
2. Base
3. Collector