© 1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10385EJ2V0DS00 (2nd edition)
(Previous No. TD-2399)
Date Published July 1995 P
Printed in Japan
2SC5006
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is an NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High fT : 4.5 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Low Cre : 0.7 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 1.2 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• High |S21e|
2
: 9 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC5006 50 pcs./Unit
2SC5006-T1 3 kpcs./Reel
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation PT 125 mW
Junction Temperature Tj 150 ˚ C
Storage Temperature Tstg –60 to +150 ˚ C
1.6 ± 0.1
0.8 ± 0.1
1.6 ± 0.1
1.0
0.5
0.5
0.2
+0.1 –0
0.3
+0.1 –0
2
1
3
0.75 ± 0.05
0.6
0 to 0.1
0.15
+0.1 –0.05
PACKAGE DIMENSIONS
in millimeters
1. Emitter
2. Base
3. Collector
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.