1
Power Transistors
2SC4985
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
n
Features
l High collector to base voltage V
CBO
l High collector to emitter V
CEO
l Allowing automatic insertion with radial taping
n
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
900
800
7
2
1
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 500mA
I
C
= 200mA, I
B
= 40mA
I
C
= 200mA, I
B
= 40mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
I
C
= 200mA, I
B1
= 40mA, I
B2
= –80mA,
V
CC
= 250V
min
800
6
3
typ
80
max
50
50
1.5
1
1
3
1
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
Unit: mm
1:Emitter
2:Collector
3:Base
MT3 Type Package
7.5– 0.2 4.5– 0.2
90°
0.8C0.8C
0.4– 0.1
0.8C
123
0.5– 0.1
0.7– 0.1
1.0– 0.1
0.85– 0.10.65– 0.1
0.7– 0.1
2.5
–
0.1
10.8
–
0.2
16.0
–
1.0
3.8
–
0.2
2.5– 0.22.5– 0.2 2.05– 0.2