1
Power Transistors
2SC4960, 2SC4960A
Silicon NPN triple diffusion planar type
For power switching
n
Features
l High-speed switching
l High collector to base voltage V
CBO
l Satisfactory linearity of foward current transfer ratio h
FE
l Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to emitter voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
900
900
900
800
900
7
2
1
0.3
40
3
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
2SC4960
2SC4960A
2SC4960
2SC4960A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 0.05A
V
CE
= 5V, I
C
= 0.5A
I
C
= 0.2A, I
B
= 0.04A
I
C
= 0.2A, I
B
= 0.04A
V
CE
= 10V, I
C
= 0.05A, f = 1MHz
I
C
= 0.2A, I
B1
= 0.04A, I
B2
= – 0.08A,
V
CC
= 250V
min
800
900
6
3
typ
4
max
50
50
1.5
1
1
3
1
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
2SC4960
2SC4960A
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0– 0.3
21.0
–
0.5
16.2
–
0.5
12.5
Solder Dip
3.5
0
.7
15.0
–
0.2
5.0– 0.2
11.0– 0.2
10.9– 0.5
5.45– 0.3
321
1.1– 0.1
2.0– 0.2
0.6– 0.2
2.0– 0.1
f 3.2– 0.1
3.2