PART
NUMBER
Embossed tape 8 mm wide.
2SC4959–T1 3 Kpcs/Reel. Pin3 (Collector) face to perfora-
tion side of the tape.
Embossed tape 8 mm wide.
2SC4959–T2 3 Kpcs/Reel. Pin1 (Emitter), Pin2 (Base) face
to perforation side of the tape.
© 1992
DATA SHEET
The mark H shows revised points.
SILICON TRANSISTOR
2SC4959
Caution; Electrostatic sensitive Device.
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
Cre = 0.4 pF TYP.
ORDERING INFORMATION
QUANTITY PACKING STYLE
Document No. P10382EJ2V0DS00 (2nd edition)
(Previous No. TD-2410)
Date Published July 1995 P
Printed in Japan 1995
1.25 ± 0.1
2.1 ± 0.1
2.0
±
0.2
0.3
–0+0.1
0.65
0.65
0.3
–0+0.1
2
1
3
0.9
±
0.1
0.3
0.15
–0.05+0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 150 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959)