© 1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10377EJ2V0DS00 (2nd edition)
(Previous No. TD-2406)
Date Published July 1995 P
Printed in Japan
2SC4955
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
Cre = 0.4 pF TYP.
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC4955-T1 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation
side of the tape.
2SC4955-T2 3 Kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to
perforation side of the tape.
* Please contact with responsible NEC person, if you evaluation
sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC4955)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 30 mA
Total Power Dissipation PT 180 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –64 to +150 ˚C
PACKAGE DIMENSIONS
in millimeters
2.9±0.2
0.95
0.95
0.4
–
0.05
+0.1
1.5
0.4
–
0.05
+0.1
2.8±0.2
0.65 –0.15
+0.1
3
2
1
0.16
–
0.06
+0.1
0 to 0.1
1.1 to 1.4
0.3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector