1
Power Transistors
2SC4898
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
n
Features
l High-speed switching
l High collector to base voltage V
CBO
l Low collector to emitter saturation voltage V
CE(sat)
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
CP
I
C
P
C
T
j
T
stg
Ratings
1000
500
10
5
40
2
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
EB
= 9V, I
C
= 0
V
CE
= 5V, I
C
= 1A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 0.6A, I
B2
= – 0.6A,
V
CC
= 250V
min
20
typ
8
max
100
100
40
1
1.5
3
1.0
Unit
m A
m A
V
MHz
m s
m s
m s
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9– 0.3
15.0
–
0.5
13.7
–
0.2
4.2
–
0.2
4.6– 0.2
2.9– 0.2
0.8– 0.1
1.4– 0.2
23
f 3.2– 0.1
2.6– 0.1
0.55– 0.15
2.54– 0.3
5.08– 0.5
3.0
–
0.5
1.6– 0.2