DATA SHEET
SILICON TRANSISTOR
2SC4885
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS SUPER MINI MOLD
Document No. P10410EJ2V0DS00 (2nd edition)
(Previous No, TC-2365)
Date Published March 1997 N
Printed in Japan 1993©
FEATURES
• Excellent Low NF in Low Frequency Band
• Low Voltage Use
• Low Cob : 0.9 pF TYP.
• Low Noise Voltage : 90 mV TYP.
• Super Mini Mold Package. EIAJ : SC-70
ABSOLUTE MAXIMUM RATINGS (Ta = 25 G01C)
Collector to Base Voltage VCBO 25 V
Collector to Emitter Voltage VCEO 13 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 50 mA
Total Power Dissipation PT 120 mW
Junction Temperature Tj 125 G01C
Storage Temperature Tstg G0255 to +125 G01C
ELECTRICAL CHARACTERISTICS (Ta = 25 G01C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 0.1 G01AVCB = 15 V, IE = 0
Emitter Cutoff Current IEBO 0.1 G01AVEB = 2 V, IC = 0
Collector to Base Saturation Voltage VCE (sat) 0.3 V hFE = 10, IC = 5 mA
DC Current Gain hFE 60 150 VCE = 5 V, IC = 5 mA
*1
Gain Bandwidth Product fT 2.5 3.5 GHz VCE = 5 V, IC = 5 mA
Collecter Capacitance Cob 0.8 1.2 pF VCB = 5 V, IE = 0, f = 1 MHz
Insertion Power Gain G01S21eG01
2
7.0 9.0 dB VCE = 5 V, IC = 5 mA, f = 1 GHz
Noise Figure NF 3.0 dB VCE = 5 V, IC = 5 mA, f = 1 GHz
Noise Voltage NV 90 200 mV See Test Cirucit
*1 Pulse Measurement PW G03 350 G01s, Duty Cycle G03 2 %
hFE Classification
Rank R13
Marking R13
hFE 60 to 150
PACKAGE DIMENSIONS
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.1±0.1
2.0±0.2
0.9±0.1
0 to 0.1
0.65
0.3
0.65
0.3
+0.1 −
0
0.3
+0.1 −
0
0.15
+0.1 −
0.05