2SC4883
器件描述:Silicon NPN Epitaxial Planar Transistor(Audio Output Driver and TV Velocity-modulation)
文件大小:23.92KB,共1页
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器件资料摘要:
118
2SC4883/4883A
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
3
2
1
2 105 10050 1000500
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
0.5A
1A
IC=2A
0
2
1
0 1.00.5
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp) –55˚C (Case Temp)
1
7
5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
10 505 100 200
0.01
0.1
0.5
1
1
5
0.5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
1.2SC4883
2.2SC4883A
DC
100ms
10ms
1ms
1 2
0.01 0.1 0.50.05 1 2
50
40
100
300
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
Typ
0
0
1
2
462810
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
30mA
15mA
10mA
IB=5mA
100mA 60mA
(VCE=4V)
0.01 0.05 0.5 2
30
50
300
100
0.1
Collector Current IC(A)
DC Current Gain h
FE
1
125˚C
25˚C
–55˚C
–0.01 –0.1 –1 –2
0
60
80
100
120
140
40
20
160
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1859/A)
Application : Audio Output Driver and TV Velocity-modulation
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.20.45
+0.2
-0.1
BEC
a
b
External Dimensions FM20(TO220F)
Weight : Approx 2.0g
a. Type No.
b. Lot No.
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
6
2
1
20(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC4883
150
150min
Unit
m A
V
m A
V
V
MHz
pF
Conditions
VCB=
VEB=6V
IC=10mA
VCE=10V, IC=0.7A
IC=0.7A, IB=70mA
VCE=12V, IE=–0.7A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
2SC4883A
180
180
2SC4883
150
150
2SC4883A
180
180min
10max
60to240
1.0max
120typ
30typ
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
20
RL
(Ω)
20
IC
(A)
1
VBB2
(V)
–5
IB2
(mA)
–100
ton
(m s)
0.5typ
tstg
(m s)
1.5typ
tf
(m s)
0.5typ
IB1
(mA)
100
VBB1
(V)
10
10max