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1998©
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
• High hFE and low VCE(sat):
VCE(sat) ≤ 0.3 V @IC = 3.0 A, IB = 0.15 A
hFE ≥ 100 @VCE = 2.0 V, IC = 1.0 A
Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 5.0 A
Collector current (pulse) IC(pulse)*1
Base current (DC) IB(DC) 2.5 A
Total power dissipation PT 1.8 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 300 µs, duty cycle ≤ 10%