The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D15603EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4813
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4813 is a power transistor developed for high-speed switching and features high hFE and low VCE(sat).
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low VCE(sat): VCE(sat) ≤ 0.3 V @IC = 3.0 A, IB = 30 mA
High hFE: hFE = 450 to 2,000 @VCE = 2.0 V, IC = 3.0 A
On-chip dumper-diode
Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) ±7.5 A
Collector current (pulse) IC(pulse) PW ≤ 10 ms, duty cycle ≤ 2% ±10 A
Base current (DC) IB(DC) 2.0 A
Total power dissipation PT Ta = 25°C 1.8 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C