1
Transistor
2SC4809
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
n
Features
l High transition frequency f
T
.
l Small collector output capacitance C
ob
and common base reverse
transfer capacitance C
rb
.
l SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package
1.6– 0.15
1.6
–
0.1
1.0
–
0.1
0.75
–
0.15
0.45
–
0.1
0.5
0.3
0 to 0.1
0.5
0.8– 0.1 0.40.4
0.2
+0.1 –0.05
0.15
+0.1 –0.05
1
2
3
0.2– 0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
3
50
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Base time constant
Common emitter reverse transfer capacitance
h
FE
ratio
Symbol
I
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
r
bb
' · C
C
C
rb
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= –5mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= –5mA, f = 31.9MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CE
= 4V, I
C
= 100m A
V
CE
= 4V, I
C
= 5mA
min
10
3
75
1.4
0.75
typ
1.9
1.4
11
0.45
max
1
400
0.5
2.7
1.6
Unit
m A
V
V
V
GHz
pF
PS
pF
Marking symbol : 1S
*
h
FE
Rank classification
Rank P Q R
h
FE
75 ~ 130 110 ~ 220 200 ~ 400
Marking Symbol 1SP 1SQ 1SR