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1998©
Document No. D15604EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high-
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low VCE(sat): VCE(sat) ≤ 0.3 V @IC = 1.5 A, IB = 10 mA
High hFE: hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A
On-chip dumper-diode
Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO 120 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) ±2.5 A
Collector current (pulse) IC(pulse) PW ≤ 300 µs, duty cycle ≤ 10% ±5.0 A
Base current (DC) IB(DC) 1.0 A
Total power dissipation PT Ta = 25°C 1.8 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C