1
Transistor
2SC4787
Silicon NPN epitaxial planer type
For intermediate frequency amplification
n
Features
l High transition frequency f
T
.
l Satisfactory linearity of forward current transfer ratio h
FE
.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT1 Type Package
6.9– 0.1 1.05
– 0.05
2.5– 0.1
3.5
–
0.1
14.5
–
0.5
(1.45)
0.8
0.7 4.0
0.15
0.85
0.8
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1 –0.05
2.5– 0.5 2.5– 0.5
2.5
–
0.1
123
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
45
35
4
50
600
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Power gain
Transition frequency
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
C
re
PG
f
T
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 100m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100m A, I
C
= 0
V
CE
= 10V, I
C
= 10mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= –1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –10mA, f = 58MHz
V
CB
= 10V, I
E
= –10mA, f = 100MHz
min
45
35
4
20
18
300
typ
50
500
max
0.1
100
0.5
1.5
Unit
m A
V
V
V
V
pF
dB
MHz
1.2– 0.1
0.65
max.
0.45
0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)