1
Transistor
2SC4755
Silicon NPN epitaxial planer type
For high speed switching
n
Features
l High-speed switching.
l Low collector to emitter saturation voltage V
CE(sat)
.
l S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package
2.1– 0.1
1.3
–
0.1
0.9
–
0.1
0.7
–
0.1
0.3
+0.1 –0
0.15
+0.1 –0.05
2.0
–
0.2
1.25– 0.1 0.4250.425
1
3
2
0.65
0.2
0.65
0 to 0.1
0.2– 0.1
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
5
300
200
150
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
Symbol
I
CBO
I
EBO
h
FE
*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
Refer to the measurment circuit
min
40
200
typ
0.17
0.76
500
2
17
15
7
max
0.1
0.1
200
0.25
1.0
4
Unit
m A
m A
V
V
MHz
pF
ns
ns
ns
Marking symbol : DV
*
h
FE
Rank classification
Rank P Q R
h
FE
40 ~ 80 60 ~ 120 90 ~ 200
Marking Symbol DVP DVQ DVR