SILICON TRANSISTOR
2SC4703
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No. P10375EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1994©
DESCRIPTION
The 2SC4703 is designed for low distortion, low noise RF amplifier
operating with low supply voltage (VCE = 5 V). This low distortion
characteristic makes it suitable for CATV, tele-communication and other
use. It employs surface mount type plastic package, Power Mini Mold
(SOT-89).
FEATURES
•Low distortion at low supply voltage.
IM2 G0155 dB TYP., IM3 G0176 dB TYP.
@VCE = 5 V, IC = 50 mA, VO = 105 dBG01/75G02
•Large PT with surface mount type package.
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Collector to Base Voltage VCBO 25 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 2.5 V
Collector Current IC 150 mA
Total Power Dissipation PT 1.8 W
Junction Temperature Tj 150 G03C
Storage Temperature Tstg G0155 to +150 G03C
* 0.7 mm G04 16 cm
2
double sided ceramic substrate. (Copper plating)
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
−0.03
+0.05
0.47
±0.06
0.42±0.06
0.42
±0.06
4.5±0.1
1.6±0.2
3.0
EB
C
1.5
0.8 MIN.
2.5±0.1
4.0±0.25
1.5±0.1