2SC4669
器件描述:Switching Power Transistor(10A NPN)
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器件资料摘要:
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
LSV Series
Switching Power Transistor
OUTLINE DIMENSIONS
Unit : mm
10A NPN
2SC4669
(TE10S4)
Case : E-pack
●Absolute Maximum Ratings
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55~1 50 ℃
Junction Temperature Tj 150 ℃
Collector to Base Voltage V
CBO
60 V
Collector to Emitter Voltage V
CEO
40 V
Emitter to Base Voltage V
EBO
7V
Collector Current DC I
C
10A
Collector Current Peak I
CP
20 A
Base Current DC I
B
1.5 A
Base Current Peak I
BP
2A
Total Transistor Dissipation P
T
Tc = 25℃ 10 W
●Electrical Characteristics (Tc=25℃)
Item Symbol Conditions Ratings Unit
Collector to Emitter Sustaining Voltage V
CEO
(sus) I
C
= 0.1A Min 40 V
Collector Cutoff Current I
CBO
At rated Voltage Max 0.1 mA
I
CEO
Max 0.1
Emitter Cutoff Current I
EBO
At rated Voltage Max 0.1 mA
DC Current Gain h
FE
V
CE
= 2V, I
C
= 5A Min 70
Collector to Emitter Saturation Voltage V
CE
(sat) I
C
= 5A Max 0.3 V
Base to Emitter Saturation Voltage V
BE
(sat) I
B
= 0.5A Max 1.2 V
Thermal Resistance θ jc Junction to case Max 12.5 ℃ /W
Transition Frequency f
T
V
CE
= 10V, I
C
= 1A TYP 50 MHz
Turn on Time ton Max 0.3
I
C
= 5A
Storage Time ts I
B1
= 0.5A, I
B2
= 0.5A Max 1.5 μ s
R
L
= 5Ω , V
BB2
= 4V
Fall Time tf Max 0.5