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2SC4633LS

器件描述:1200V/30mA High-Voltage Amplifier,High-Voltage Switching Applications
器件厂商:SANYO [Sanyo Semicon Device]
文件大小:26.83KB,共3页
Sponsor by e络盟
器件资料摘要:
2SC4633LS
No.3702-1/3
Features

High breakdown voltage(V
CEO
min=1200V).

Small Cob(typical Cob=2.0pF).

Full-isolation package.

High reliability(Adoption of HVP process).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage V
CBO
1500 V
Collector-to-Emitter Voltage V
CEO
1200 V
Emitter-to-Base Voltage V
EBO
5V
Collector Current I
C
30 mA
Collector Current (Pulse) I
CP
100 mA
Collector Dissipation P
C
2W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Collector Cutoff Current I
CBO
V
CB
=1200V, I
E
=0 1 µA
Emitter Cutoff Current I
EBO
V
EB
=4V, I
C
=0 1 µA
DC Current Gain h
FE
V
CE
=5V, I
C
=1.5mA 10 60
Gain-Bandwidth Product f
T
V
CE
=10V, I
C
=1.5mA 6 MHz
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN3702B
2SC4633LS
1200V / 30mA High-Voltage Amplifier,
High-Voltage Switching Applications
Package Dimensions
unit : mm
2079D
[2SC4633LS]
11502 TS IM TA-3427 / 11599 HA (KT) / 80296 YK (KOTO) TA-0465, AX-7506, 8-6924
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220FI(LS)
16.0
14.0
3.6
3.5
7.2
16.1
0.7
2.55 2.55
2.4
1.2
0.9
0.75
0.6
1.2
4.5
2.8
123
10.0
3.2