1
Transistor
2SC4655
Silicon NPN epitaxial planer type
For high-frequency amplification
n
Features
l Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
l SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package
1.6– 0.15
1.6
–
0.1
1.0
–
0.1
0.75
–
0.15
0.45
–
0.1
0.5
0.3
0 to 0.1
0.5
0.8– 0.1 0.40.4
0.2
+0.1 –0.05
0.15
+0.1 –0.05
1
2
3
0.2– 0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
*
f
T
C
re
Conditions
I
C
= 10m A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= –1mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
min
30
20
5
70
150
typ
230
1.3
max
250
Unit
V
V
V
MHz
pF
Marking symbol : K
*
h
FE
Rank classification
Rank B C
h
FE
70 ~ 160 110 ~ 250
Marking Symbol KB KC