NPN Silicon General Purpose
Amplifier Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-416/SC–90 package
which is designed for low power surface mount applications, where
board space is at a premium.
• Reduces Board Space
• High h
FE
, 210–460 (typical)
• Low V
CE(sat)
, < 0.5 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Value Unit
Collector-Base Voltage V
(BR)CBO
50 Vdc
Collector-Emitter Voltage V
(BR)CEO
50 Vdc
Emitter-Base Voltage V
(BR)EBO
5.0 Vdc
Collector Current — Continuous I
C
100 mAdc
DEVICE MARKING
2SC4617 = B9
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation
(1)
P
D
125 mW
Junction Temperature T
J
150 °C
Storage Temperature Range T
stg
–55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage (I
C
= 50 µAdc, I
E
= 0) V
(BR)CBO
50 — — Vdc
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0) V
(BR)CEO
50 — — Vdc
Emitter-Base Breakdown Voltage (I
E
= 50 µAdc, I
E
= 0) V
(BR)EBO
5.0 — — Vdc
Collector-Base Cutoff Current (V
CB
= 30 Vdc, I
E
= 0) I
CBO
— — 0.5 µA
Emitter-Base Cutoff Current (V
EB
= 4.0 Vdc, I
B
= 0) I
EBO
— — 0.5 µA
Collector-Emitter Saturation Voltage
(2)
(I
C
= 60 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
— — 0.4
Vdc
DC Current Gain
(2)
(V
CE
= 6.0 Vdc, I
C
= 1.0 mAdc)
h
FE
120 — 560
—
Transition Frequency (V
CE
= 12 Vdc, I
C
= 2.0 mAdc, f = 30 MHz) f
T
— 180 — MHz
Output Capacitance (V
CB
= 12 Vdc, I
C
= 0 Adc, f = 1 MHz) C
OB
— 2.0 — pF
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%.
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 3
1
Publication Order Number:
2SC4617/D
2SC4617
NPN GENERAL
PURPOSE AMPLIFIER
TRANSISTORS
SURFACE MOUNT
CASE 463–01, STYLE 1
SOT–416/SC–90
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER