2SC4596E
GENERAL DESCRIPTION
High frequency, high power NPN transistors in a
plastic envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V
-
100 V
V
CEO
Collector-emitter voltage (open base)
-
60 V
I
C
Collector current (DC)
-
5 A
I
CM
Collector current peak value
-
A
P
tot
Total power dissipation T
mb
25
-
25 W
V
CEsat
Collector-emitter saturation voltage I
C
= 2A; I
B
= 0.2A
-
1.5 V
V
BE
Emitter forward voltage I
E
= 2A 1.5 V
t
f
Fall time I
C
=2A,I
B1
=-I
B2
=0.2A,V
CC
=30V 0.5 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V - 100 V
V
CEO
Collector-emitter voltage (open base) - 60 V
V
EBO
Emitter-base oltage (open colloctor) 5 V
I
C
Collector current (DC) - 5 A
I
B
Base current (DC) - 1 A
P
tot
Total power dissipation Tmb 25 - 25 W
T
stg
Storage temperature -55 150
T
j
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
I
CBO
Collector-base cut-off current V
CB
=100V 0.1 mA
I
EBO
Emitter-base cut-off current V
EB
=5V 0.1 mA
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=1mA 60 V
V
CEsat
Collector-emitter saturation voltages I
C
=2A; I
B
= 0.2A 1.5 V
h
FE
DC current gain I
C
=1A; V
CE
= 5V 100 200
f
T
Transition frequency at f = 30MHz I
C
=0.5A; V
CE
= 10V 120 MHz
C
c
Collector capacitance at f = 1MHz V
CB
= 10V 80 pF
t
on
On times IC=2A,IB1=-IB2=0.2A,VCC=30V 0.5 us
t
s
Tum-off storage time IC=2A,IB1=-IB2=0.2A,VCC=30V 1.5 us
t
f
Fall time IC=2A,IB1=-IB2=0.2A,VCC=30V 0.5 us
ELECTRICAL CHARACTERISTICS
TO-220F
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com