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1998©
Document No. D15600EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4554
NPN SILICON EPITAXIAL TRANSISTOR
FOR SWITCHING
DATA SHEET
2002
The 2SC4554 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
low power dissipation.
In addition, a high hFE enables alleviation of the driver load.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 800 (VCE = 2 V, IC = 5 A)
VCE(sat) ≅ 0.12 V (IC = 5 A, IB = 0.05 A)
On-chip C to E damper diode
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) ±15 A
Collector current (pulse) IC(pulse)* ±22 A
Base current (DC) IB(DC) 4.0 A
Total power dissipation PT (Tc = 25°C) 35 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT