2SC4570
器件描述:NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
文件大小:66.91KB,共8页
Sponsor by e络盟
器件资料摘要:
DATA SHEET
SILICON TRANSISTOR
2SC4570
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
Document No. P10408EJ2V0DS00 (2nd edition)
(Previous No. TC-2434)
Date Published March 1997 N
Printed in Japan 1993©
DESCRIPTION
The 2SC4570 is a low supply voltage transistor designed for UHF
OSC/MIX.
It is suitable for a high density surface mount assembly since the
transistor has been applied super mini mold package.
FEATURES
• High fT : 5.5 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)
• Low Cob : 0.7 pF TYP. (@ VCB = 5 V, IE = 0, f = 1 MHz)
• Super Mini Mold Package. (EIAJ : SC-70)
ORDERING INFORMATION
PART
NUMBER
QUANTITY PACKING STYLE
2SC4570-T1 3 kpcs./Reel Embossed tape 8 mm wide. Pin 3 (Collector) face
to perforation side of the tape.
2SC4570-T2 3 kpcs./Reel Embossed tape 8 mm wide. Pin 1 (Emitter), Pin 2
(Base) face to perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4570)
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3V
Collector Current IC 30 mA
Total Power Dissipation PT 120 mW
Junction Temperature Tj 125 G01C
Storage Temperature Tstg G0255 to +125 G01C
PACKAGE DIMENSIONS
(Units: mm)
1.25±0.1
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.1±0.1
2.0±0.2
0.9±0.1
0 to 0.1
0.65
0.3
0.65
0.3
+0.1 −
0
0.3
+0.1 −
0
0.15
+0.1 −
0.05