115
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4557
900
550
7
10(Pulse20)
5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4557
100max
100max
550min
10to28
0.5max
1.2max
6typ
105typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=5A
IC=5A, IB=1A
IC=5A, IB=1A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
2SC4557
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Temperature Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta Derating
Reverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
0
0
2
4
6
8
10
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
1A
600mA
800mA
400mA
200mA
1.2A
IB=100mA
0.10.050.02 15100.5
0
2
1
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
(IC/IB=5)
Collector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚C
VCE(sat) 125˚C
(C
as
e
T
e
m
p
)
0.2 10.5 105
0.1
0.5
5
10
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
ton
tf
VCC 250V
IC:IB1:–IB2=10:1.5:3
0.1
1
2
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
80
60
40
20
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
100 50010 50 1000
1
0.5
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
10 50 100 500 1000
0.1
1
0.5
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
100
µ
s
Without Heatsink
Natural Cooling
0
10
4
2
8
6
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
–55˚C (Case Temp)
0.02 0.10.05 1 1050.5
5
10
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
25˚C
–55˚C
25˚C (Case Temp)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
250
RL
(Ω)
50
IC
(A)
5
VBB2
(V)
–5
IB2
(A)
–1.5
ton
(m s)
1max
tstg
(m s)
5max
tf
(m s)
0.5max
IB1
(A)
0.75
VBB1
(V)
10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2 5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.