The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998©
Document No. D15598EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4552 is a power transistor developed for high-speed
switching and features low VCE(sat) and high hFE. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = 2 V, IC = 3 A)
VCE(sat) ≤ 0.3 V (IC = 8 A, IB = 0.4 A)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 15 A
Collector current (pulse) IC(pulse)*30
Base current (DC) IB(DC) 7.5 A
Total power dissipation PT (Tc = 25°C) 30 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 300 µs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter