DATA SHEET
SILICON TRANSISTOR
2SC4536
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
Document No. P10369EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1994©
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low
noise figure RF amplifier. It features excellent linearity and large dynamic
range, which make it suitable for CATV, telecommunication, and other use,
it employs plastic surface mount type package (SOT-89).
FEATURES
• Low Distortion
IM2 = 57.5 dB TYP. @ VCE = 10 V, IC = 50 mA
IM3 = 82 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low Noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 1 GHz
• Power Mini Mold Package Used. High Power Dissipation.
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Maximum Voltage and Current (TA = 25 G01C)
Collector to Base Voltage VCBO 30 V
Collector to Emitter Voltage VCEO 15 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 250 mA
Maximum Power Dissipation
Total Power Dissipation
at 25 G01C Ambient Temperature PT* 2.0 W
Maximum Temperatures
Junction Temperature Tj 150 G01C
Storage Temperature Range Tstg G0265 to +150 G01C
* 0.7 mm G03 16 cm
2
double sided ceramic substrate. (Copper plating)
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
−0.03
+0.05
0.47
±0.06
0.42±0.06
0.42
±0.06
4.5±0.1
1.6±0.2
3.0
EB
C
1.5
0.8 MIN.
2.5±0.1
4.0±0.25
1.5±0.1