113
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator, Lighting Inverter and General Purpose
2SC4518/4518A
IC–VCE Characteristics (Typical)
hFE–IC Temperature Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
Pc–Ta Derating
Reverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
0.03 0.10.05 11050.5
0
1.5
1.0
0.5
Collector Current IC(A)
VBE(sat)
VCE(sat)
IC/IB=5 Const.
0.2 10.5 5
0.1
0.5
5
7
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
ton
tf
VCC 250V
IC:IB1:IB2=1:0.15:–0.5
35
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
50 500 1000100
1
5
0.5
0.1
0.03
0.05
20
10
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
2SC4518 2SC4518A
10 50 100 500 1000
1
0.5
0.03
0.05
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
100
µ
s
0.02 0.10.05 1 50.5
5
10
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
25˚C
–55˚C
0
5
1
2
3
4
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
0.3
1
4
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
0
0
2
1
5
3
4
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
600mA
700mA
400mA
150mA
250mA
IB=50mA
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
250
RL
(Ω)
139
IC
(A)
1.8
VBB2
(V)
–5
IB2
(A)
–0.9
ton
(m s)
0.7max
tstg
(m s)
4max
tf
(m s)
0.5max
IB1
(A)
0.27
VBB1
(V)
10
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4518 2SC4518A
900 1000
550
7
5(Pulse10)
2.5
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4518 2SC4518A
100max
100max
550min
10to25
0.5max
1.2max
6typ
50typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1.8A
IC=1.8A, IB=0.36A
IC=1.8A, IB=0.36A
VCE=12V, IE=–0.35A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.