105
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4445
900
800
7
3(Pulse6)
1.5
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4445
100max
100max
800min
10to30
0.5max
1.2max
15typ
50typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=0.7A
IC=0.7A, IB=0.14A
IC=0.7A, IB=0.14A
VCE=12V, IE=–0.3A
VCB=10V, f=1MHz
2SC4445
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Temperature Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta Derating
Reverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
0
0
2
1
3
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
500mA
300mA
200mA
100mA
50mA
IB=700mA
0.1 10.5 2
0.1
0.5
5
7
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
ton
tf
VCC 250V
IC:IB1:–IB2=10:1.5:5
60
40
20
3.5
0
0 50 100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
10 505 500 1000100
1
0.5
0.1
0.05
10
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
10 505 100 500 1000
0.05
1
0.5
0.1
10
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
50
µ
s
100
µ
s
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
0.10.050.01 310.5
0
1
2
(IC/IB=5)
Collector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
VCE(sat)
0.3
1
4
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
0
3
1
2
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
0.01 0.10.05 1 30.5
2
5
10
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
25˚C
–55˚C
25˚C (Case Temp)
–55˚C (Case Temp)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
250
RL
(Ω)
357
IC
(A)
0.7
VBB2
(V)
–5
IB2
(A)
–0.35
ton
(m s)
0.7max
tstg
(m s)
4max
tf
(m s)
0.7max
IB1
(A)
0.1
VBB1
(V)
10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2 5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.