102
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1673)
Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4388
200
180
6
15
4
85(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC4388
10max
10max
180min
50min*
2.0max
20typ
300typ
Unit
m A
m A
V
V
MHz
pF
Conditions
VCB=200V
VEB=6V
IC=50mA
VCE=4V, IC=3A
IC=5A, IB=0.5A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC4388
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
3
2
1
0 0.5 1.0 2.01.5
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=10A
5A
Collector Current I
C
(A)
0
15
10
5
021
Base-Emittor Voltage VBE(V)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
10 5053 100 200
0.05
1
0.5
0.1
10
40
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
0.02 0.1 1 100.5 5 15
20
50
100
300
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
Typ
0
0
5
15
10
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
50mA
IB=20mA
(VCE=4V)
0.02 0.5 51
20
50
200
100
0.1 10 15
Collector Current IC(A)
DC Current Gain h
FE
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10
0
10
20
30
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
1A
700mA
500mA
300mA
200mA
100mA
100
80
60
40
20
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2 5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
40
RL
(Ω)
4
IC
(A)
10
VBB2
(V)
–5
IB2
(A)
–1
ton
(m s)
0.5max
tstg
(m s)
1.8max
tf
(m s)
0.6max
IB1
(A)
1
VBB1
(V)
10
* hFE Rank O(50to100), P(70to140), Y(90to180)