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1998©
Document No. D15594EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SC4351 is a high-speed Darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse motors or blushless motor of OA and FA equipment.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
On-chip C to B constant voltage diode for surge voltage
absorption
On-chip C to E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60 ± 10 V
Collector to emitter voltage VCEO 60 ± 10 V
Emitter to base voltage VEBO 8.0 V
Collector current (DC) IC(DC) ±5.0 A
Collector current (pulse) IC(pulse)* ±10 A
Base current (DC) IB(DC) 0.5 A
Total power dissipation PT (Tc = 25°C) 20 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter