The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.

SILICON POWER TRANSISTOR
2SC4336
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D17261EJ1V0DS00 (1st edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2004

DESCRIPTION
The 2SC4336 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.

FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Fast switching speed
• Low collector-to-emitter saturation voltage
VCE(sat) ≤ 0.3 V MAX. (IC = 6.0 A)

ORDERING INFORMATION
PART NUMBER PACKAGE
2SC4336 Isolated TO-220 (MP-45)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to base voltage VCBO 100 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 10 A
Collector current (pulse)
Note
IC(pulse) 20 A
Base current (DC) IB(DC) 6.0 A
Total power dissipation (TC = 25°C) PT 30 W
Total power dissipation (TA = 25°C) PT 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Note PW ≤ 300 µs, Duty Cycle ≤ 10%
PACKAGE DRAWING (Unit: mm)
10.5 MAX.
7 ±0.2
3.2 ±0.2φ
3.0 MAX.
1.3 ±0.20.8 ±0.1
2.54 TYP.2.54 TYP.
1.5 ±0.2
5 ±0.2 13.5 MIN.
12 ±0.2
5

±0.1
17 ±0.2
2.8 ±0.2
4.7 MAX.
2.5 ±0.10.5 ±0.1
123
1: Base
2: Collector
3: Emitter