96
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4298
500
400
10
15(Pulse30)
5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4298
100max
100max
400min
10to30
0.5max
1.3max
10typ
85typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=500V
VEB=10V
IC=25mA
VCE=4V, IC=8A
IC=8A, IB=1.6A
IC=8A, IB=1.6A
VCE=12V, IE=–1.5A
VCB=10V, f=1MHz
2SC4298
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) θ j-a–t Characteristics
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta Derating
Reverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
0.10.050.03 1 5 10 200.5
0
1.5
0.5
1.0
(IC/IB=5)
Collector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚C
VCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
10.5 10 155
0.1
0.5
5
8
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC:IB1:IB2=10:1:–2
0.1
1
2
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
80
60
40
20
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
10 505 500100
1
10
50
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1A
Duty:less than 1%
10 505 100 500
1
5
10
50
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
100
µ
s
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
IC–VBE Temperature Characteristics (Typical)
0
10
4
2
8
6
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
–55˚C (Case Temp)
25˚C (Case Temp)
0.02 0.10.05 1 151050.5
5
10
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
25˚C
–55˚C
0
0
15
5
10
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
1.2A
1.5A
600mA
800mA
400mA
200mA
IB=100mA
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
(Ω)
25
IC
(A)
8
VBB2
(V)
–5
IB2
(A)
–1.6
ton
(m s)
1max
tstg
(m s)
3max
tf
(m s)
0.5max
IB1
(A)
0.8
VBB1
(V)
10
External Dimensions FM100(TO3PF)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.