© 1993
DATA SHEET
SILICON TRANSISTOR
Document No. P10372EJ2V0DS00 (2nd edition)
(Previous No. TC-2404)
Date Published July 1995 P
Printed in Japan
2SC4228
DESCRIPTION
The 2SC4228 is a low supply voltage transistor designed for VHF,
UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the
transistor has been applied super mini mold package.
This is achieved by direct nitride passivated base surface process
(NESAT
TM
process) which is an NEC proprietary fabrication technique.
FEATURES
• High fT : 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Low Cre : 0.3 pF TYP. (@ VCB = 3 V, IE = 0, f = 1 MHz)
• High |S21e|
2
: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Super Mini Mold Package. (EIAJ: SC-70)
ORDERING INFORMATION
PART
QUANTITY PACKING STYLE
NUMBER
2SC4228-T1 3 kpcs/Reel. Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
2SC4228-T2 3 kpcs/Reel. Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to
perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4228)
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
1.25 ± 0.1
2.1 ± 0.1
2.0 ± 0.2
0.3
–0 +0.1
0.65
0.65
0.3
–0 +0.1
2
1
3
0.9 ± 0.1
0.3
0.15
–0.05 +0.1
0 to 0.1
Marking
PACKAGE DIMENSIONS
in millimeters
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector