© 1996
DATA SHEET
SILICON TRANSISTOR
2SC4225
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF through UHF band.
It has large dynamic range and good current characteristics.
FEATURES
• Low Noise and High Gain
NF = 1.5 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz
S21e 
2
= 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz
(reference value)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage VCB0 25 V
Collector to Emitter Voltage VCE0 12 V
Emitter to Base Voltage VEB0 3.0 V
Collector Current IC 70 mA
Total Power Dissipation PT 160 mW
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Characteristics Symbol MIN. TYP. MAX. Unit Test Conditions
Collector Cutoff Current ICB0 1.0 µAVCB = 10 V, IE = 0
Emitter Cutoff Current IEB0 1.0 µAVEB = 2 V, IC = 0
DC Current Gain hFE 40 80 200 VCE = 3 V, IC = 20 mA, pulsed
Gain Bandwidth Product fT 4 GHz VCE = 3 V, IC = 20 mA, f = 1 GHz
Output Capacitance Cob 1.2 1.8 pF VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain S21e 
2
7.5 9.0 dB VCE = 3 V, IC = 20 mA, f = 1 GHz
Noise Figure NF 1.5 3.0 dB VCE = 3 V, IC = 5 mA, f = 1GHz
hFE Classifications
Rank R2 R3
Marking R2 R3
hFE 40 to 120 100 to 200
Document No. P11192EJ2V0DS00 (2nd edition)
Date Published February 1996 P
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
2.0 ± 0.2
0.3
+0.1 –0
0.65
0.65
0.3
+0.1 –0
0.15
+0.1 –0.05
0 to 0.1
0.3
0.9 ± 0.1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector