92
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4140
500
400
10
18(Pulse36)
6
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4140
100max
100max
400min
10to30
0.5max
1.3max
10typ
165typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=500V
VEB=10V
IC=25mA
VCE=4V, IC=10A
IC=10A, IB=2A
IC=10A, IB=2A
VCE=12V, IE=–2.0A
VCB=10V, f=1MHz
2SC4140
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta Derating
Reverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
0
0
8
4
12
16
18
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
800mA
1.2A
600mA
400mA
200mA
1.6A
IB=100mA
0.02 0.10.05 1 5 10 180.5
0
1
1.4
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
(IC/IB=5)
Collector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚CVCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
10.2 0.5 10 185
0.1
0.5
5
10
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC:IB1:–IB2=10:1:2
0.1
1
2
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
130
100
50
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 15010 505 500100
1
0.5
0.03
0.1
0.05
10
50
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than 1%
10 505 100 500
0.05
0.03
5
1
0.5
0.1
10
50
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
100
µ
s
10ms 1ms
DC
0.02 0.10.05 1 181050.5
5
10
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
25˚C
–55˚C
0
18
8
4
16
12
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
–55˚C (Case Temp)
25˚C (Case Temp)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
(Ω)
20
IC
(A)
10
VBB2
(V)
–5
IB2
(A)
–2
ton
(m s)
1max
tstg
(m s)
3max
tf
(m s)
0.5max
IB1
(A)
1
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.